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SP600
Semiconductor
July 1998
WN ITHDRA TE ART W P OLE SS OBS NS PROCE SIG DE NO NEW
File Number 2428.4
Features
Half Bridge 500VDC Driver
The SP600 is a smart power high voltage integrated circuit (HVIC) optimized to drive MOS gated power devices in halfbridge topologies. It provides the necessary control and management for PWM motor drive, power supply, and UPS applications.
* Maximum Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V * Ability to Interface and Drive Standard and Current Sensing N-Channel Power MOSFET/IGBT Devices * Creation and Management of a Floating Power Supply for Upper Rail Drive * Simultaneous Conduction Lockout * Overcurrent Protection * Single Low Current Bias Supply Operation * Latch Immune CMOS Logic * Peak Drive in Excess of 0.5A
Ordering Information
PART SP600 TEMPERATURE -40oC to +85oC PACKAGE 22 Lead Plastic DIP
Pinout
SP600 (PDIP) TOP VIEW
FAULT 1 22 TOP 21 BOT 20 NC 19 D1U 18 G1U 17 G2U 16 CL2 15 TRIPU 14 PHASE 13 VOUT 12 VBS
Functional Block Diagram
VBS 12
D1U
VBIAS 10 RND 3 VDD 4 VDF 11 3.5 RBS UV LOCK OUT + IONT LEVEL SHIFT IOFFT S R Q
19 G1U 18 G2U 17 TRIPU 15 CL2 16 UPPER LOWER
ITRIPSEL 2 VBIAS 3
VDD 4 VSS 5 TRIPL 6 CL1 7 G2L 8 G1L 9 D1L 10 VDF 11
TOP 22
ITRIPSEL
S R
PHASE Q 14 3.5 RO 13 VOUT
D1L 10 IONB BOT 21 CMOS TIMING AND CONTROL IOFFB VOUT SENSE AND FILTER FAULT Q S R ITRIPSEL S R ITRIPSEL 2 VSS 5 Q S R G1L Q 9 G2L 8 UV LOCK OUT + -
FAULT 1
750 RF
TRIPL 6 CL1 7
FILTER
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. Copyright (c) Harris Corporation 1998
SP600
Absolute Maximum Ratings
Full Temperature Range, All Voltage Referenced to VSS Unless Otherwise Noted. Note 1, Note 2.
Thermal Information
Thermal Resistance JA Plastic DIP Package . . . . . . . . . . . . . . . . . . . . . . . . 75oC/W Maximum Package Power Dissipation at TA = +85oC, PO Plastic DIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW Operating Ambient Temperature Range, TA . . . . . . .-25oC to +85oC Storage Temperature Range, TS . . . . . . . . . . . . . . .-40oC to +150oC Lead Temperature (Soldering 10s) . . . . . . . . . . . . . . . . . . . . +265oC
Low Voltage Power Supply, VBIAS (Note 1) . . . . . . . . . . . . . . 18VDC Floating Low Voltage Boot Strap . . . . . . . . . . . . . . . . . . . . . . 18VDC Power Supply to Phase, VBS Low Voltage Signal Pins Fault, ITRIPSEL , VDD, TRIPL , CL1, G2L . . . -0.5VDC to VDD +0.5 G1L, D1L, VDF, TOP, BOT CL2, TRIPU , G1U, G2U, D1U to Phase. . . . -0.5VDC to VBS +0.5 High Voltage Pins Phase, VPHASE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500VDC (VBS , VOUT , TRIPU , CL2, G2U and D1U: 0V-18V Higher Than Phase) Dynamic High Voltage Rating Phase, . . . . . . . . . . . . . 10,000V/s DVPHASE/DT
NOTES: 1. Care must be taken in the application of VBIAS as not to impose high peak dissipation demands on a relatively small metallized noise dropping resistor (RND). Prolonged high peak currents may result if +15VDC is applied abruptly and/or if the local bypass capacitor CDD is large. It is suggested that CDD be 10MFD. If it is desirable to switch the 15VDC source or if a CDD is larger, additional series impedance may be required. 2. Consult factory for additional package offerings.
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Specifications
(VBIAS = 15V, Pulsed <300ms), Unless Otherwise Noted, All Parameters Referenced to VSS Except TRIPU , CL2, G1U, D1U, and VBS Referenced to PHASE. DF: VDF to VBS , CF: VBS to PHASE SYMBOL TEMP +25oC -40oC to +85oC +25oC -40oC to +85oC +25oC -40oC to +85oC IBS +25oC -40oC to +85oC +25oC -40oC to +85oC +25oC -40oC to +85oC +25oC -40oC to +85oC +25oC -40oC to +85oC VTRIP L/U
B
PARAMETER DC CHARACTERISTICS Input Current (5V < VTOP , VBOT , VTRIPSEL < 15V)
MIN
TYP
MAX
UNITS
IIN
7 6.95 7 6.9 7 6.95 90 90 110 109 9 9.7 5 4.7
20 30 1.7 1.7 1.7 1.7 875 900 8 8 8 8 8 8 105 105 130 130 10 10.5 7 7
30 33 2.05 2.1 2.05 2.1 1000 1060 9 9.1 9 9.1 9 9.1 125 127 150 152 11.5 11.8 9 9.6
A A mA mA mA mA A A V V V V V V mV mV % % V V V V
IBIAS Quiescent Current (All Inputs Low)
IBIAS
L
IBIAS Quiescent Current (VOUT VBIAS, and All Inputs Low) IBS Quiescent Current Bootstrap Supply
IBIAS
H
TOP Threshold Level
VTOP
BOTTOM Threshold Level
VBOT
Current TRIPSELECT Threshold Level
VTRIPSEL
Trip Lower and Upper Comparator Threshold Level - Normal (ITRIPSEL = VSS) Trip Lower and Upper Comparator Threshold Level - Boost (ITRIPSEL = VDD) % of Measured VTRIP L/U
N
VTRIP L/U
N
+25oC -40oC to +85oC
Under Voltage Lockout Thresholds (VDD and VBS)
VLOCK
+25oC -40oC to +85oC +25oC -40oC to +85oC
Phase Out of Status Voltage Threshold (PHASE)
VOSVT
2
SP600
Electrical Specifications
(VBIAS = 15V, Pulsed <300ms), Unless Otherwise Noted, All Parameters Referenced to VSS Except TRIPU , CL2, G1U, D1U, and VBS Referenced to PHASE. DF: VDF to VBS , CF: VBS to PHASE (Continued) SYMBOL RF TEMP +25oC -40oC to +85oC Upper/Lower Source Impedances (ISOURCE = 10mA) RSO L/U +25oC -40oC to +85oC Upper/Lower Sink Impedances (ISINK = 10mA) RSI L/U +25oC -40oC to +85oC Bootstrap Supply Current Limiting Impedance RBS +25oC -40oC to +85oC Noise Dropping Resistor Impedance RND +25oC -40oC to +85oC High Voltage Leakage (500V VBS, VOUT, PHASE, TRIPU, CL2, G1U, G2U, and D1U to VSS. All other Pins at VSS) Miller Clamp Diodes; D1U and D1L (ID = 10mA) Noise Clamping Zeners; CL2 and CL1 (IZ = 10mA) ILK +25oC MIN 500 450 12 7 8 5 2 1.4 6 5.4 TYP 760 760 17 17 12 12 3.5 3.5 10 10 1 MAX 1000 1100 23 29 16 20 5 5.6 14 14.6 3 UNITS A
PARAMETER Faultbar Impedance at IFBAR = 1mA
VD1U/L VCL2/1-LOW
+25oC +25oC -40oC to +85oC +25oC +25oC -40oC to +85oC
0.40 6.35 6.15 7.0 2 1.4
0.90 6.61 6.61 8.5 3.5 3.5
1.40 6.85 7.15 8.0 5 5.6
V V V V
Noise Clamping Zeners; CL2 and CL1 (IZ = 50mA) VOUT Limiting Resistance
VCL2/1HIGH
RO
NOTE: Maximum Steady State / 15VDC Supply Current = IBIAS
L
/ IBS
Switching Specifications
PARAMETER Refresh One Shot Timer
(All Referenced to VSS , Except: TRIPU , Cl2, G1U, G2U, and D1U Referenced to PHASE. DF : VDF to VBS , CF : VBS to PHASE) SYMBOL tREF TEMP +25oC -40oC to +85oC +25oC -40oC to +85oC tFN +25oC -40oC to +85oC tOSVF +25oC -40oC to +85oC tMINIW +25oC -40oC to +85oC tON +25oC -40oC to +85oC +25oC -40oC to +85oC +25oC -40oC to +85oC MIN 200 180 2 1.85 2 1.85 500 400 300 275 1.6 1.5 1.3 1.05 2.5 2.1 TYP 350 350 3 3 3 3 700 700 430 430 2.3 2.4 2.0 2.1 3.2 3.3 MAX 500 540 4 4.35 4 4.35 900 1050 600 660 3.1 3.4 3.4 3.9 4.5 5.2 UNITS s s s s s s ns ns ns ns s s s s s s
Delay Time of Trip I/U Voltage (ITRIPSEL low) to G2U/G2L Low (50% Overdrive) Delay Time of Trip I Voltage (ITRIPSEL low) to Faultbar Low Delay Time of Phase Out of Status to Faultbar Low (TOP High) Minimum Logic Input Pulse Width: TOP and BOTTOM Minimum G1U/G1L On Time
tOFF
TN
Minimum Pulsed Off Time, G2U/G2L
tOFF
Turn On Delay Time of G1U (BISTATE MODE)
tON
D
3
SP600
Switching Specifications
PARAMETER Turn On Delay Time of G1L (BISTATE MODE) (All Referenced to VSS , Except: TRIPU , Cl2, G1U, G2U, and D1U Referenced to PHASE. DF : VDF to VBS , CF : VBS to PHASE) (Continued) SYMBOL tON
D
TEMP +25oC -40oC to +85oC +25oC -40oC to +85oC +25oC -40oC to +85oC +25oC -40oC to +85oC +25oC -40oC to +85oC +25oC -40oC to +85oC +25oC -40oC to +85oC +25oC -40oC to +85oC
MIN 2.5 2.1 0.75 0.60 0.75 0.60 0.75 0.60 1.5 1.2 3.4 3.15 25 15 25 15
TYP 3.2 3.3 1.0 1.1 1.0 1.1 1.0 1.1 2.5 2.6 4.5 4.8 50 50 50 50
MAX 4.5 5.2 1.5 1.75 1.5 1.75 1.45 1.75 3.5 4 6.6 7.4 100 115 100 115
UNITS s s s s s s s s s s s s ns ns ns ns
Turn On Delay Time of G1U (THREE-STATE MODE) Turn On Delay Time of G1L (THREE-STATE MODE) Turn Off Delay Time of G2U and G2L
tON
D
tON
D
tOFF
D
Minimum Dead Time: G1U off to G1L on, or G1L off to G1U on (BISTATE MODE) Fault Reset Delay to Clear Faultbar
tD.T.
tR.T.
Rise Time of Upper and Lower Driver (Load = 2000pF) Fall Time of Upper and Lower Driver (Load = 2000pF)
tR U/L
tF U/L
Recommended Operating Conditions and Functional Pin Description
PARAMETER FAULTBAR ITRIPSELECT VBIAS VDD VSS TRIP I CL1 G2L and G1L VDF VBS VOUT PHASE TRIPU CL2 G2U and G1U TOP BOT D1U D1L Open Drain Fault Indicator Output CONDITION
(All Voltages Referenced to VSS, Unless Otherwise Noted. See Figure 1)
Digital Input Command to Increase TRIPL and TRIPU Threshold by 30% 14.5V to 16.5V with 15V nominal, 1.5mA DC BIAS Current CDD to VSS COMMON 100mV Signal to Shut Off LOWER Drive and Trigger a Fault Output Lower Noise Clamp Zener Low Impedance Driver Designed to Drive Power MOS Transistors (LOWER) Current Limiting Charging Resistor for Bootstrap Capacitor Power Supply Bootstrap Supply, Normally a Diode Drop Below VDD Voltage with Respect to the Floating PHASE Reference Load Connection Node Floating Reference Point for High Side Control Circuitry: VBS, TRIPU, CL2, G1U, G2U and D1U 100mV Signal, Referenced to PHASE, to Shut Off UPPER Drive Upper Noise Clamp Zener Low Impedance Driver Designed to Drive Power MOS Transistors (UPPER) Digital Input to Command the UPPER On Digital Input to Command the LOWER On Miller Clamp UPPER to VBS Miller Clamp LOWER to VDD
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SP600 Timing Diagram
TOP 1 0 BOT 1 0 1 0 1 0 1 VALID BOTON IOFFT IONT IOFFB UPPER LOWER VOUT 0 1 0 1 0 1 0 1 0 1 0 VDC COM LOWER UPPER 0 1 0 VDC COM IONT IOFFB VALID BOTON IOFFT BOT TOP 1 0 1 0 REFRESH ONE SHOT IONB 1 0 1 0 1 0 1 0 1 0 1 0 1
REFRESH ONE SHOT IONB
VOUT
THREE-STATE MODE SLOWER THAN REFRESH ONE SHOT TIMER NOTE: BOT switching not relevant.
BISTATE MODE SLOWER THAN REFRESH ONE SHOT TIMER
Typical Circuit Configuration
TRUTH TABLE Applicable to Typical Circuit Configuration (Figure 1) INPUTS TOP 0 1 1 1 X 0 1 X BOT 0 1 1 1 X 1 0 X TRIPL 0 0 0 0 1 0 0 X TRIPU X 0 1 X X X X X PHASE X 1 1 0 X X X X VBIAS 1 1 1 1 1 1 1 0 UPPER 0 1 0 0 0 0 0 0 OUTPUTS LOWER 0 0 0 0 0 1 0 0 FAULT BAR 1 1 0 0 0 1 1 0
NOTE: 0 = False, 1 = True, X = Don't Care
5
SP600
25VDC VLINK 500VDC
RCU RDU RPU 19 18 17 15 14 PHASE VOUT VBS VDF TOP FAULT ITRIPSELECT VBIAS VDD 3 IBIAS 4 CDD VSS 5 SP600 HVIC D1L G1L G2L TRIPL 13 12 CF IBS VOUT LOAD RCL RDL
D1U G1U G2U TRIPU 21 SYSTEM CONTROL 22 1 2 BOT
11 DF 10 9 8 6
RPL
15V
COM
FIGURE 1. TYPICAL CIRCUIT CONFIGURATION
LEGEND Application Specific Application Specific Application Specific Application Specific Application Specific Application Specific 3F at 15DC 0.22F Ceramic X7R at 15VDC Harris P/N A114M or Equiv PRV VLINK NOTE: RCU RDU RPU RCL RDL RPL CDD CF DF Upper Gate Charging Resistor Upper Gate Discharge Resistor Upper Current Pilot Resistor Lower Gate Charging Resistor Lower Gate Discharging Resistor Lower Current Pilot Resistor Local LV Filter Capacitor Flying Capacitor for Bootstrap Supply Flying Diode for Bootstrap Supply
Refer to `Additional Product Offerings' for information concerning power output devices.
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SP600 Functional Description
The SP600 provides a flexible, digitally controlled power function which is intended to be used as PWM drivers of N-Channel MOSFETs and/or IGBTs for up to 240VAC line rectified totem-pole applications. The CMOS driveable inputs are filtered and captured by the control logic to determine the output state. The logic includes fixed timing to prohibit simultaneous conduction of the external power switches and, thru the VOUT sense detector, verifies the output voltage state is in agreement with the controlled inputs. The >11VDC floating power supply required to drive the upper rail external power device is created and managed by the HVIC through CF and DF. This capacitor is refreshed from the VDD supply each time VOUT goes low. If the upper channel is commanded on for a long period of time, the bootstrap capacitor CF is automatically refreshed by bringing VOUT low. This is accomplished by turning off the upper rail MOSFET/IGBT, momentarily turning on the lower rail output device, followed by returning control back to the upper switch. Otherwise, CF would gradually deplete its charge allowing the upper switch to come out of saturation. The upper and lower gate drivers allow for controlled charge and discharge rates as well as facilitate the use of nearly lossless current sensing power MOS devices. The over current trip level can be boosted 30% on a pulse by pulse basis by logic level `1' applied to ITRIPSELECT. A FAULT output signal is generated when any of the following occurs: V bias is low Over current is detected V phase doesn't agree with the input signal Reset of FAULT is provided by externally removing power or by holding both TOP and BOT inputs low for the required reset time (trtMAX). Each application can be individually optimized by the selection of external components tailored to ensure proper overall system operation including: Determining the ratings and sizing of MOSFETs and IGBTs, mixed or matched, as well as flyback diodes (FBD). The selection of separate gate charge (RC) and discharge (RD) impedance chosen per the load capacitance, frequency of operation, and DI/DT dependent recovery characteristics of the associated FBDs. RD should also be sized to prevent simultaneous bridge conduction by ensuring gate discharge in the allotted turn off pulse width (tOFF MIN). The selection of over current detection resistors (RP), compatible with current sense MOSFETs/IGBTs or shunt(s) may be used. For the floating bootstrap supply DF and CF must be determined. DF must support the worse case system bus voltage and handle the charging currents of CF. Proper selection should take into consideration TRR and TFR per the desired operating frequency. Proper selection of CF is a trade off between the minimum tON time of the lower rail to charge up the capacitor, the amount of charge transfer required by the load, and cost. Due to automatic refresh the capacitor is replenished every 350s TYP (or even sooner if input commands the TOP to switch at a faster repetition rate). The local filter capacitor (CDD) should be sized sufficiently large enough to transfer the charge to CF without causing a significant droop in VDD. As a rule of thumb it should be at least 10 times larger than CF and be located adjacent to the VDD and VSS pins to minimize series resistance and inductance.
Refer to Application Note AN8829 for more details about module operation and selection of external components.
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